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| STW55NM60ND N-channel 600 V - 0.047 - 51 A TO-247 FDmeshTM II Power MOSFET (with fast diode) Preliminary Data Features Type STW55NM60ND VDSS 600 V RDS(on) ID Pw < 0.060 51 A 350 W The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities 1 2 3 TO-247 Application Switching applications Figure 1. Internal schematic diagram Description The FDmeshTM II series belongs to the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Marking 55NM60ND Package TO-247 Packaging Tube Order codes STW55NM60ND November 2007 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings STW55NM60ND 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 600 25 51 32 204 350 2.8 40 -55 to 150 150 Unit V V A A A W W/C V/ns C PTOT dv/dt(2) Tstg Tj 2. Peak diode recovery voltage slope Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area ISD 51 A, di/dt 600 A/s, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Value 0.36 50 300 Unit C/W C/W C Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAS, VDD = 50 V) Max value 15 850 Unit A mJ 2/9 STW55NM60ND Electrical characteristics 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDS = Max rating VDS = Max rating @125 C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 25.5 A 3 4 0.047 Min. 600 1 10 100 5 0.060 Typ. Max. Unit V A A nA V Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq.(2) td(on) tr td(off) tf Qg Qgs Qgd Rg Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS = 15 V, ID = 25.5 A VDS = 50 V, f = 1 MHz, VGS = 0 Min. Typ. 45 5800 300 30 900 TBD TBD TBD TBD 190 30 90 2.5 Max. Unit S pF pF pF VGS = 0, VDS = 0 to 480 V VDD = 300 V, ID = 25.5 A RG = 4.7 , VGS = 10 V (see Figure 7), (see Figure 2) VDD = 480 V, ID = 51 A, VGS = 10 V, (see Figure 3) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV Open drain pF ns ns ns ns nC nC nC 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 3/9 Electrical characteristics STW55NM60ND Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 50 A, VGS = 0 ISD = 50 A, VDD = 100 V di/dt = 100 A/s (see Figure 4) ISD = 50 A,VDD = 100 V di/dt = 100 A/s, Tj = 150 C (see Figure 4) TBD TBD TBD TBD TBD TBD Test conditions Min. Typ. Max. 51 204 1.3 Unit A A V ns C A ns C A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%. 4/9 STW55NM60ND Test circuit 3 Figure 2. Test circuit Switching times test circuit for resistive load Figure 3. Gate charge test circuit Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped Inductive load test circuit Figure 6. Unclamped inductive waveform Figure 7. Switching time waveform 5/9 Package mechanical data STW55NM60ND 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/9 STW55NM60ND Package mechanical data TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 7/9 Revision history STW55NM60ND 5 Revision history Table 8. Date 16-Nov-2007 Document revision history Revision 1 First release. Changes 8/9 STW55NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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